? 2003 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces t j = 25 c50 a v ge = 0 v t j = 150 c1ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = 50 a, v ge = 15 v t j = 25 c 1.8 v note 1. symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 75 a i c110 t c = 110 c60a i cm t c = 25 c, 1 ms 300 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm = 150 a (rbsoa) clamped inductive load @ 600 v p c t c = 25 c 500 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s m d mounting torque (m3) 1.13/10 nm/lb.in. weight to-247 ad 6 g to-268 smd 4 g ds99113(11/03) to-268 (ixgt) c (tab) g = gate, c = collector, e = emitter, tab = collector g c e to-247 ad (ixgh) e c (tab) features z medium frequency igbt z square rbsoa z high current handling capability z mos gate turn-on - drive simplicity applications z pfc circuits z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies z ac motor speed control z dc servo and robot drives z dc choppers v ces = 600 v i c25 = 75 a v ce(sat) < 1.8 v t fi typ = 100 ns hiperfast tm igbt optimized for 10-25 khz hard switching and up to 100 khz resonant switching g ixgh 60n60b2 ixgt 60n60b2 advance technical data
ixgh 60n60b2 ixgt 60n60b2 inductive load, t j = 25 c i c = 50 a, v ge = 15 v v ce = 400 v, r g = 3.3 ? note 1 inductive load, t j = 125 c i c = 50 a, v ge = 15 v v ce = 400 v, r g = 3.3 ? note 1 to-247 ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-268 outline min. recommended footprint (dimensions in inches and mm) ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 50 a; v ce = 10 v, 40 58 s note 1 c ies 3900 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 290 pf c res 100 pf q g 170 nc q ge i c = 50 a, v ge = 15 v, v ce = 0.5 v ces 25 nc q gc 57 nc t d(on) 28 ns t ri 30 ns t d(off) 160 270 ns t fi 100 170 ns e off 1.0 2.5 mj t d(on) 28 ns t ri 36 ns e on 0.6 mj t d(off) 310 ns t fi 240 ns e off 2.8 mj r thjc 0.25 k/w r thck 0.15 k/w notes: 1. pulse test, t < 300 s wide, duty cycle < 2%. ixys reserves the right to change limits, test conditions, and dimensions.
? 2003 ixys all rights reserved fig. 2. extended output characteristics @ 25 deg. c 0 50 100 150 200 250 300 350 012345678 v c e - volts i c - amperes v ge = 15v 13v 5v 7v 9v 11v fig. 3. output characteristics @ 125 deg. c 0 10 20 30 40 50 60 70 80 90 100 0.511.5 22.53 v ce - volts i c - amperes v ge = 15v 13v 11v 5v 7v 9v fig. 1. output characteristics @ 25 deg. c 0 10 20 30 40 50 60 70 80 90 100 0.511.5 22.53 v c e - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 4. dependence of v ce(sat) on temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v c e (s at) - normalized i c = 50a i c = 25a v ge = 15v i c = 100a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 3.7 567891011121314151617 v g e - volts v c e - volts t j = 25oc i c = 100a 50a 25a fig. 6. input admittance 0 50 100 150 200 250 300 456 78910 v g e - volts i c - amperes t j = 125oc -40oc t j = 25oc ixgh 60n60b2 ixgt 60n60b2
ixgh 60n60b2 ixgt 60n60b2 fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 100 0 50 100 150 200 250 300 i c - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 8. dependence of turn-off energy on r g 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 50 r g - ohms e off - millijoules i c = 25a t j = 125oc v ge = 15v v ce = 400v i c = 50a i c = 100a fig. 9. dependence of turn-off en e r g y on i c 0 1 2 3 4 5 6 7 20 30 40 50 60 70 80 90 100 i c - amperes e off - millijoules r g = 3.3 ? v ge = 15v v ce = 400v t j = 125oc t j = 25oc fig. 10. dependence of turn-off energy on temperature 0 1 2 3 4 5 6 7 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules i c = 100a r g = 3.3 ? v ge = 15v v ce = 400v i c = 50a i c = 25a fig. 11. dependence of turn-off sw itching tim e on r g 200 300 400 500 600 700 800 900 1000 1100 1200 0 5 10 15 20 25 30 35 40 45 50 r g - ohms switching time - nanosecond i c = 50a t d(off) t fi - - - - - - t j = 125oc v ge = 15v v ce = 400v i c = 25a i c = 100a fig. 12. dependence of turn-off sw itching tim e on i c 50 100 150 200 250 300 350 400 20 30 40 50 60 70 80 90 100 i c - amperes switching time - nanosecond t d(off) t fi - - - - - - r g = 3.3 ? v ge = 15v v ce = 400v t j = 125oc t j = 25oc
? 2003 ixys all rights reserved fig. 14. gate charge 0 3 6 9 12 15 0 20 40 60 80 100 120 140 160 180 q g - nanocoulombs v g e - volts v ce = 300v i c = 50a i g = 10ma fig. 15. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - p f c ies c oes c res f = 1 mhz fig. 13. dependence of turn-off sw itching time on temperature 50 100 150 200 250 300 350 25 35 45 55 65 75 85 95 105 115 125 t j - degr ees centigr ade switching time - nanosecond i c = 25a 50a 100a t d(off) t fi - - - - - - r g = 3.3 ? v ge = 15v v ce = 400v i c = 100a 50a 25a fig. 16. maximum transient thermal resistance 0.05 0.075 0.1 0.125 0.15 0.175 0.2 0.225 0.25 0.275 1 10 100 1000 pulse width - milliseconds r (th) j c - (oc/w) ixgh 60n60b2 ixgt 60n60b2
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